IC-CAP Power Electronics Modeling

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As power modules become smaller, switching frequencies increase and new wide band gap (WBG) technologies enable ever faster edge switch rates, we observe a growing need for accurate device models for the power electronics design community. Advanced models are presented for the following three technologies and device structures:

GaN ASM-HEMT Model, adopted by the CMC

Gallium Nitride (GaN) Advanced SPICE Model for High Electron Mobility Transistors (ASM-HEMT) Model, adopted by the Compact Model Coalition (CMC).

_{Image used by permission from Panasonic.}

Keysight model for Si and SiC Power-MOSFET devices

Si and SiC Power-MOSFET devices

Keysight model for IGBT devices

Keysight model for insulated-gate bipolar transistor (IGBT) devices

_{Image courtesy of Infineon.}

All 3 of these models have been implemented in Verilog-A, and are available for simulation in Advanced Design System (ADS) 2017. The Si/SiC and IGBT models have been specially formulated for customers who do not have access to device process parameters, a situation that is common in power electronics design labs.

The user interface reflects the major steps that any modeling engineer must undergo.

	Set project parameters, model flags and device constants.
	Load data from a highly structured directory.
	Extract model parameters.
	Verify model accuracy.
	Export device model parameters.

With the latest, most accurate models, you can rest assured that the device behavior has been captured with excellent accuracy.

Power Electronics Modeling

Figure 1. The measured data shown in square markers are well captured by the modeled data shown in solid lines. Various modeling steps are shown on the left. On the right, parameters may be manually tuned using sliders.

There are two groups of customers that will leverage these extractions: circuit designers and modeling engineers. For designers, we present the W7398B Power Electronics Model Generator (PEMG) software bundle for device modeling. Designers can leverage extraction flows for all the model types offered: GaN HEMT, Si/SiC PowerMOS, and IGBT. For modeling engineers who want maximum flexibility to customize their flows, we present 3 IC-CAP add-on packages. These are products summarized in the table below.

Product Model Number	Description
W7398B	The W7398B Power Electronics Model Generator (PEMG) Software bundle for device modeling is an advanced device modeling software tailored towards the model extraction requirements of discrete semiconductor power electronic devices..
W7016E	The W7016E IC-CAP Power Electronics PowerMOS SiC Extraction Package Add-on software package enables the extraction of parameters of circuit compact models for Si and SiC PowerMOS devices.
W7017E	The W7017E IC-CAP Power Electronics IGBT Extraction Package Add-on package enables the extraction of parameters of circuit compact models for Insulated Gate Bipolar Transistor (IGBT) devices.
W7018E	The W7018E IC-CAP Power Electronics GaN Extraction Package Add-on software package enables the extraction of parameters of circuit compact models for gallium nitride high electron mobility transistors (GaN HEMT) devices.

Stay ahead of the curve and get your designs to production sooner and with greater confidence. The power electronics model extraction suite provides a comprehensive modeling solution for discrete power electronics devices, with an intuitive UI and the latest, most powerful models.

For more information about Device Modeling software, please visit Device Modeling IC-CAP.