High Throughput 1 ns Pulsed IV Memory Test Solution

Keysight NX5730A High Throughput 1 ns Pulsed IV Memory Test Solution is designed to perform high-speed pulsed IV and precise DC measurement.

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  • Maximum number of measurement pins

    2

  • Minimum current measurement resolution

    1 pA

  • Minimum voltage measurement resolution

    N/A

  • Additional features

    N/A

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Highlights

  • Precise and fast characterization of new memory, such as spin transfer torque magnetoresistive random access memory (STT-MRAM) from DC to high-speed pulsed IV test on silicon wafers
  • Apply accurate and high-speed pulsed voltages (down to 1 ns pulse) to magnetic tunnel junction (MTJ) for STT-MRAM and precisely measure the resistance of MTJ
  • Perform all typical MTJ characterization tests in one memory test solution
  • 10 to 100 times faster cycle test, such as a bit error rate test (BERT)
  • Capture and visualize MTJ switching waveforms clearly during the writing pulse
  • Dedicated 1 ns IV memory test solution with Keysight technical expertise
What's Included:
  • System cabinet
  • PIV driver unit
  • PIV receiver unit