The information below is provided for reference only.
Philips MOS Model 9 is a compact MOSFET model suitable for both digital and analog circuit applications. It has single equations covering the variations of current and charge in all device operating regions.
All important physical effects are modeled such as substrate body effect, drain induced barrier lowering, channel-length modulation, and avalanche multiplication.
MOS Model 9 is in the public domain and has been implemented within IC-CAP through work jointly carried out by Philips Research Labs, the National Microelectronics Research Center (NMRC) at the University of Cork in Ireland, and Keysight EEsof EDA.
The quick extraction method has been implemented in IC-CAP. With this method, minimal optimization is needed for parameter extractions.
For example, with the quick extraction method only 40 I-V data points are needed to extract a parameter set. This is in contrast to conventional procedures which typically require 500 to 600 I-V data points for each transistor.
This allows you to build up a database for statistical modeling quickly. A junction capacitance model with extraction methodology has also been implemented with this update.
For more information on the Philips MOS Model 9, including model features, parameter descriptions, model equations, and source code, click on the following link: