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5 Critical Factors for Power Electronics Design in the Era of GaN

5 Critical Factors for Power Electronics Design in the Era of GaN

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INTRODUCTION

 

In today’s modern society, the heartbeat of technological advancement, from 5G / 6G to smart vehicles, resonates with the vital role played by power electronics. Electricity consumption continues to rise with a growing global population and rapid progress in electrification. Simultaneously, sustainability concerns are driving the imperative to optimize power efficiency. To address these challenges, wide bandgap semiconductors, notably gallium nitride (GaN) semiconductors, are ushering in a transformative era for power electronics.

 

Due to their unique physical properties, GaN power electronics exhibit superior performance characteristics compared to their traditional silicon-based counterparts. For instance, GaN-based switched-mode power supplies (SMPS) can achieve higher switching speeds, higher power density, and a faster charging experience, all while reducing heat generation and device sizes. These benefits are helping drive the market for GaN power electronics, which is forecast to grow 60% annually, from $125 million in 2021 to $2 billion by 2025.

 

However, realizing the full potential of GaN in modern power electronics is no easy feat. The design of GaN-based power electronics demands meticulous attention to modeling and simulation of complex physical effects, from thermal to electromagnetic interference (EMI).

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