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Product Fact Sheets
An accurate, quick, and effective evaluation is vital for fast time to market of high-performance, high-reliability advanced NVMs
• Demand from the Internet of Things (IoT) and artificial intelligence (AI) requires high-speed processing (set [write] / reset [erase]), long lifetime, low power, and scaling down of NVM-embedded microcomputers.
• IoT and AI devices require fast time to market ofadvanced NVMs such as resistive random-access memory (ReRAM), phase-change memory (PCRAM), and ferroelectric RAM (FeRAM). • Manufacturers must introduce new materials and processes to accelerate the development cycle and improve device performance and reliability.
• Accurate, fast, and effective electrical characterization helps developers quickly improve performance and reliability.
Challenges of Advanced NVM Development and Evaluation
Challenges |
Needs |
Problems |
• achieving accurate comprehension of device characteristics such as fast FORM and RESET-SET |
• fast pulsed IV measurement for accurate measurements of device characteristics |
• Conventional pulse generators (PG) and oscilloscopes cannot measure low current or fast phenomena because of insufficient measurement accuracy • Conventional systems cannot accurately evaluate memories, such as ReRAM, that dynamically change the resistance value in the measurement because of the load line effect of PG output impedance |
• predicting long lifetime (maximum number of write (set) / erase (reset) cycle) of memories accurately in a short time and securing reliability |
• shortened endurance test time |
• Reading pulse configuration for every pulse polarity change makes the set (write) / reset (erase) cycle time-consuming |
• accelerating development speed |
• accelerating development speed |
• Conventional instruments require you to do the following: • write measurement and automation programs • manually change instruments and wiring, depending on what you are measuring • import data to your computer to analyze it |
The B1500A device parameter analyzer solves advanced NVM characterization challenges with an all-in-one solution
The solution integrates source / measure unit, waveform generator / fast measurement unit (WGFMU), high-voltage semiconductor pulse generator unit (HV-SPGU), and EasyEXPERT group+ software.
• Get fast pulsed IV measurement with a wide range of conditions for accurate device characterization:
- low current measurement, resulting from the minimum current measurement range of 1 μA
- fast phenomenon and transition measurements, resulting from the minimum time resolution of 10 ns and the maximum sampling rate of 200 MSa/s
- accurate characterization without a load line effect, resulting from the low output impedance
- various advanced NVMs evaluation, resulting from the maximum ±40 V output voltage and minimum 10 ns setting resolution1
• Accelerate endurance test for accurate and quick lifetime prediction.
- overhead reduction of write-erase cycle with three-level pulse and arbitrary linear waveform generation
- fast and accurate fatigue characterization during the write-erase stress cycle
• Reduce time and effort for measurement and analysis:
- ready-to-use application tests for advanced NVMs such as ReRAM (butterfly curve, FORM, RESET-SET, endurance), PCRAM (RESET-SET, endurance), and FeRAM (hysteresis, PUND, endurance)
- automated test sequence without programming, powerful data analysis, and robust data management
- automated switching between DC-IV and fast pulsed IV measurements without changing instruments or wiring
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