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Data Sheets
Description
The HMMC-5625 is a generic wide band distributed amplifier, covering the frequency span 2 to 50 GHz. Both input and output ports are designed to provide 50 Ohm terminations. Bonding pads are provided in the layout to allow amplifier operation at frequencies lower than 2 GHz by means of external circuit components. The amplifier is biased with a single positive drain supply (VDD) and a single negative gate supply (VG1). A second gate connection is provided for external gain control applications.
Absolute Maximum Ratings1,2
Symbol |
Parameters/conditions |
Minimum |
Maximum |
Units |
VDD |
Positive Drain Voltage |
|
7.0 |
Volts |
IDD |
Total Drain Current |
|
170 |
mA |
VG1 |
First Gate Voltage |
-3.5 |
0 |
Volts |
VG2 |
Second Gate Voltage |
-3.0 |
+3.0 |
Volts |
PDC |
DC Power Dissipation |
|
1.2 |
Watts |
Pin |
CW Input Power |
|
20 |
dBm |
Tbs |
Backside Temperature |
|
+85 |
°C |
Tstg |
Storage Temperature |
-65 |
150 |
°C |
Tmax |
Max Assembly Temperature (60 sec maximum) |
|
200 |
°C |
DC Specifications/Physical Properties1
Symbol |
Parameters/conditions |
Minimum |
Typical |
Maximum |
Units |
IDSS |
Saturated Drain Current (VDD = 5.0 V, VG1 = 0.0 V, VG2 = open circuit) |
130 |
150 |
170 |
mA |
VP |
First Gate Pinch-off Voltage (VDD = 5.0 V, IDD = 15 mA, VG2 = open circuit) |
-1.7 |
|
-0.5 |
Volts |
VG2 |
Second Gate Self-Bias Voltage (VDD = 5.0 V, IDD = 75 mA) |
|
2 |
|
Volts |
IDSOFF(VG1) |
First Gate Pinch-Off Current |
|
6 |
10 |
mA |
IDSOFF(VG2) |
Second Gate Pinch-Off Current (VDD = 5.0 V, IDD = 75 mA, VG2 = -2.5 V) |
|
10 |
|
mA |
Θch-bs |
Thermal Resistance (Tbs = 25 °C) |
|
63 |
|
°C/Watt |
Applications
The HMMC-5625 traveling wave amplifier is designed for use as a general purpose wideband power stage in communication systems, microwave instrumentation, and optical systems. It is ideally suited for broadband applications requiring a flat gain response and excellent port matches over a 2 to 50 GHz frequency range. Dynamic gain control and low–frequency extension capabilities are designed into these devices. It is characteristic of traveling wave amplifiers that S22 tends to 0 dB and greater out of band.
The HMMC-5625 is has been re-designed to mitigate an instability. Caution is still recommended when operating this device at low temperatures and/or following it with a reflective low-pass filter or similar device.
Operation
The recommended bias conditions for best performance for the HMMC-5625 are VDD = 5.0 V, IDD = 75 mA. To achieve these drain current levels, VG1 is typically biased between -0.2 V and -0.6 V. No other bias supplies or connections to the device are required for 2 to 50 GHz operation. The gate voltage (VG1) should be applied prior to the drain voltage (VDD) during power up and removed after the drain voltage during power down.
The HMMC-5625 is a DC coupled amplifier. External coupling capacitors are needed on RFIN and RFOUT ports. The drain bias pad is connected to RF and must be decoupled to the lowest operating frequency.
The auxiliary gate and drain contacts are provided when performance below 1 GHz is required. Connect external capacitors to ground to maintain input and output VSWR at low frequencies (see Additional References). Do not apply bias to these pads.
The second gate (VG2) can be used to obtain 30 dB (typical) dynamic gain control. For normal operation, no external bias is required on this contact.
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