Understanding Probing Requirements When Measuring Dynamic Power Module Parameters

Article Reprints

Understanding Probing Requirements When Measuring Dynamic Power Module Parameters

By Michael Zimmermann, Bernhard Holzinger, Ryo Takeda and Takamasa Arai at Keysight Technologies

For high-quality characterization, wide-bandgap (WBG) transistors need to be characterized dynamically. In contrast to discrete devices, testing a power module in a double-pulse test system requires measuring low-side and high-side signals. This introduces new challenges for isolation and common-mode (CM) rejection due to the high voltage and fast switching. This article provides an overview of the probing requirements for each of the relevant signals.

This article was originally published in Bodo’s Power Systems Magazine, in July 2022. It is reprinted with permission.

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