HMMC-5644 – DC - 50 GHz Diode Limiter
Data Sheets
DC – 50 GHz Diode Limiter
Description
The HMMC-5644 is a 50 GHz integrated diode limiter that can be used to protect sensitive RF circuits from excess RF power and ESD. The HMMC-5644 can be used as an unbiased 23 dBm limiter or the limiting power level can be adjusted with bias voltage.
Absolute Maximum Ratings1
Symbol |
Parameters / Conditions |
Minimum |
Maximum |
Units |
Pin |
Continuous incident power Bias: 0V to reverse 15V |
|
30 |
dBm |
Continuous incident power Bias: reverse 25V |
|
27 |
dBm |
|
Vanode |
Bias on Anode Pads |
-25 |
4.5 |
V |
Vcathode |
Bias on Cathode Pads |
-4.5 |
23 |
V |
Ianode |
Current into anode, all anode pads connected, |anode bias| = |cathode bias| |
|
200 |
mA |
Icathode |
Current into cathode, all cathode pads connected, |anode bias| = |cathode bias| |
-200 |
|
mA |
Vin (max) |
Max continuous dc voltage into RFIN or RFOUT with Vanode=Vcathode =0V |
-4.5 |
4.5 |
V |
Tthermo2,3 |
Thermocouple temperature |
|
75 |
°C |
Tstg |
Storage temperature |
65 |
165 |
°C |
Tmax4 |
Assembly temperature |
|
200 |
°C |
DC Specifications / Physical Properties1
Symbol |
Parameters / conditions |
Min. |
Typ. |
Max. |
Units |
Rthru |
RFIN to RFOUT resistance |
|
|
3 |
Ohms |
Vfwd1A |
Anode to RFIN, 1 mA forward bias |
2.9 |
|
3.4 |
V |
Vfwd1B |
Cathode to RFIN, 1 mA forward bias |
-3.4 |
|
-2.9 |
V |
Irev |
Current into Anode, |
-2.8 |
|
-2 |
mA |
Vanode = -15V and Vcathode – 15V (reverse bias current through resistor network) |
|
|
|
|
|
RfwdA |
RFIN to cathode resistance, forward biased |
|
|
13 |
Ohms |
RfwdB |
RFIN to anode resistance, forward biased |
|
|
13 |
Ohms |
Rsense |
Rsense to RFIN resistance |
8000 |
10000 |
11000 |
Ohms |
Vfwd1BiasA |
Voltage at Diode_A, 1 mA forward bias |
4 |
|
4.6 |
V |
Vfwd1BiasC |
Voltage at Diode_C, 1 mA forward bias |
-4.6 |
|
-4 |
V |
ESD Sensitivity1
Symbol |
Parameters / conditions |
Min. |
Max. |
|
Units |
RFIN and RFOUT |
HBM2,3 |
-15000 |
15000 |
V |
|
SENSE |
HBM2 |
-500 |
500 |
V |
|
DIODE_A and DIODE_B |
HBM2 |
-300 |
300 |
V |
|
RFIN, RFOUT A1 through A8 C1 through C8 |
HBM2 |
<-200 |
>200 |
V |
|
Operation
The HMMC-5644 is a passive diode limiter designed to provide protection from ESD and high RF power. In normal operation the anode pads (A1 to A8) and cathode pads (C1 to C8) are bonded to ground for unbiased operation or to capacitors close to the chip for biased operation. For proper limiting action when biased the supplies must be able to source and sink current. When bonded to ground P-1dB is approximately 24 dBm. P-1dB can be increased or decreased by biasing the anode and cathode. Distortion improves (higher TOI) when the anode and cathode are reverse biased. Reverse bias as high as 25V is allowed. S21 is not highly dependent on reverse bias voltage; there is approximately 0.1 dB improvement in S21 at 50 GHz from 0V to 15V reverse bias. If the TC810 is biased it is important to have a low RF impedance from anode and cathode to ground for the chip to provide good ESD protection.
For 50 GHz operation it is important to provide a low inductance connection to RFIN and RFOUT; use two short wire bonds or mesh. The SENSE, DIODE_A and DIODE_C pads can be left open if not needed.
The HMMC-5644 is RF symmetric (RFIN and RFOUT can be switched) but the anode and cathode are dependent on orientation and the sense pad only connects to the RFIN pad.