这是您想要的页面. 查看搜索结果:
cog 技术总览

The W7025E PathWave IC-CAP BSIM4 Model Extraction Package provides measurement and extraction procedures for the BSIM4 industry-standard model for MOSFET devices.

Highlights

The W7025E PathWave IC-CAP BSIM4 Model Extraction Package includes:

  • DC, CV, and RF extraction for BSIM3v3.3, including  high-frequency effects
  • Robust, direct extraction procedures find the best initial values for optimizers, thereby removing the need for excessive optimization and tuning steps
  • Flexible, customizable extraction flow
  • Windows-style data visualization, optimization and tuning
  • Shared user interface environment with other extraction CMOS extraction products
  • Target and Corner Modeling
  • Binning model support

The BSIM4 model addresses the MOSFET physical effects into sub-100nm regime. It is a physics-based, accurate, scalable, robust, and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. The model is developed by the BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley.

Source: https://bsim.berkeley.edu/models/bsim4/

扩展您产品的功能

软件
查看所有软件
附件
查看所有附件
服务
查看所有服务
支持
查看所有支持

需要帮助或遇到问题？

联系我们