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Application Notes
Graphene has generated dramatic interest recently due to its many unique properties, and extensive research is being pursued on single- as well as few-layer graphene. One future direction in graphene-related research seeks alternative types of layered inorganic materials that act as analogues of graphene but also exhibit some needed attributes that graphene lacks .In this context, hexagonal boron nitride (h-BN) is attracting considerable attention for two main reasons. First, hexagonal boron nitride is a layered material, similar to graphite. It is composed of sp2 covalently bonded atoms in a honeycomb arrangement within each layer and therefore is iso-structural to graphene. As these layers are held together by weak van der Waals interactions, h-BN ultrathin ilms can be produced by mechanical exfoliation from a bulk crystal. Second, boron nitride is a wide band gap (more than 5 eV) III-V compound, whereas graphene is normally a zero-gap semiconductor. Current research predicts monolayer h-BN, a so-called “white graphene”, is likely to be very useful as a complementary substrate for graphene electronics.
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