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Application Notes
In this technical note, we will briely describe a number of different conigurations for doing PFM measurement using the Keysight Technologies Inc. 5420/5500/5600 AFM systems, particularly about the coniguration that allows the user to perform PFM experiments with high AC/DC bias with the help of an external high voltage amplifier.
Piezoelectric force microscopy (PFM) has found major applications in the study of ferroelectric materials, particularly for high resolution imaging, domain switching, local hysteresis measurements, and switching of ferroelectric capacitors. For example, ferroelectric materials are used in many ield effect transistor applications due to their high permittivity. With the demand of miniaturization of electronic devices, it becomes important to study the size effect of ferroelectric materials, i.e., to study the critical size range where significant deviation from bulk properties occurs. The high spatial resolution of PFM also provides a unique opportunity to study the fundamental process of domain switching, including the thermodynamics and kinetics of domain nucleation, growth, and relaxation. By analyzing local hysteresis loop measured by PFM, information about the piezoelectric properties of small ferroelectric domains can be obtained, including coercive voltages, nucleation voltages, forward and reverse saturation and remanent responses, as well as the effective work of switching deined by the area included in the hysteresis loop. Simultaneously recorded VPFM and LPFM nanoscale hysteresis loops were used to differentiate 900 domain switching from 1800 domain switching, and to study the dependence of PFM on crystallographic orientations.
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