主要技術規格
- DC, CV and RF extraction for BSIMSOI v4.4.0 with methods for modeling high-frequency effects for MOS/CMOS
- Robust, direct extraction procedures used to find best initial values for optimizers thereby removing the need for excessive optimization and tuning steps
- Flexible, customizable extraction flow
- Windows-style data visualization, optimization and tuning
- Shared user interface environment with extraction package products available for other industry standard models including BSIM3, BSIM4, PSP, HiSIM2 and HiSIM_HV. The common measurement module enables you to use measurements to extract any of these models
敘述
The W8552EP IC-CAP BSIMSOI Model Extraction Package provides complete measurement and extraction procedures for DC, CV and RF model parameters. The intuitive, Windows-style user interface enables engineers to quickly produce an accurate model.