Discontinued IC-CAP Model Numbers

IC-CAP Modeling Suite

Process and technology independent, data-based models for large-signal, 3-terminal applications

Provides Curtice and Statz MESFET models, and EEFET3/EEHEMT1 empirical, nonlinear models for general GaAs FET applications.

Offers Gummel-Poon and EEBJT2 models with high-frequency extensions.

Public-domain BJT model that has been implemented by IC-CAP through work jointly carried out by Philips Research Labs, TU Delft, and Keysight EEsof EDA.

Developed as a replacement for the SPICE Gummel-Poon model by representatives of the IC and CAD industries.

Comprehensive measurement and extraction procedures for III-V HBT device modeling

Highly automated model generation for both digital and analog 3-terminal applications using interpolative spline fitting of S-parameters and DC data arrays over the device's operating range

Complete DC to RF modeling tool for both measurement and extraction.

IC-CAP UCB MOS Level 2,3 model extraction module license

Compact MOSFET model suitable for both digital and analog circuit applications

Complete DC to RF modeling tool for both measurement and extraction.

First complete, commercial solution to extract the DC and RF parameters of the HiSIM2.4 model, an advanced, surface-potential CMOS model

Complete measurement and extraction procedures for DC, CV and RF model parameters

First complete and commercially available extraction tool to support the latest version of the Compact Modeling Council's (CMC) next generation of standardized CMOS model

Provides complete measurement and extraction procedures for DC and CV model parameters

Root diode model software is data-based, rather than physical or empirical

Accurate measurement and modeling of 1/f noise for deep sub-micron CMOS, BJT, FET and HBT devices as well as RF passive components.

Perform mathematical transforms, customize plots, write macros, create extraction routines using parameter extraction language (PEL) and write user defined functions using C programming language.

Simulates device or circuit performance using the built-in SPICE simulators and allows linking to a wide range of external simulators.

Allows IC-CAP to control and automate the LCRZ measurement instruments required to characterize your device or circuit.

Allows IC-CAP to control and automate the DC measurement instruments required to characterize your device or circuit.

Allows IC-CAP to control and automate the AC measurement instruments required to characterize your device or circuit.

Allows IC-CAP to control and automate the time domain measurement instruments required to characterize your device or circuit.

Allows IC-CAP to control and automate the noise measurement instruments required to characterize your device or circuit.

Conventional parametric analysis and a patented non-parametric boundary analysis including PCA, PFA and multiple linear regression.

Efficiently extract or re-center CMOS models based on process control monitor (PCM) target data

Includes library importer, corner tool and automated test suite simulation library verification

Includes measurement and extraction procedures for the measurement-based Keysight NeuroFET model. This model is suitable for FET and HEMT devices.