Low and High Frequency C-V Measurement of Semiconductors

Application Notes

Keysight E4980A and 4284A Precision LCR Meters

Parameters such as the capacitance of the oxide layer (Cox) and the density of substrate impurities (Nsub) that are required in the evaluation of the manufacturing process of MOS type semiconductors can be derived by using measured C-V characteristics. To make an accurate evaluation of these processes, precise C-V measurements are required. Such measurements entail the following difficulties.


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