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Accurate and Efficient Characterization of Power Devices at 3000 V/20 A

Accurate and Efficient Characterization of Power Devices at 3000 V/20 A

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Driven by the twin requirements of improved energy efficiency and lower carbon emissions, the need for accurate power device characterization continues to take on increased importance. Device structures and fabrication processes are being improved, and new wide band gap (WBG) semiconductor materials, such as silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga2O3) are being studied to support higher voltages and provide a lower turn-on resistance. Meeting these needs requires a measurement instrument with the ability to handle both high voltage and high current.

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Column Control DTX