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Ключевые возможности и технические характеристики

  • DC, CV and RF extraction for HiSIM_HV with methods for modeling high-frequency effects for MOS/CMOS
  • Robust, direct extraction procedures used to find best initial values for optimizers thereby removing the need for excessive optimization and tuning steps
  • Flexible, customizable extraction flow
  • Windows-style data visualization, optimization and tuning
  • Shared user interface environment with extraction package products available for other industry standard models including BSIM3, BSIM4, BSIMSOI4, PSP and HiSIM2. The common measurement module enables you to use measurements to extract any of these models.


Note: Model number 85194Q has been discontinued; however, the feature/capability is now included in the W8555EP/ET.

The information below is provided for reference only.

The HiSIM_HV Model Extraction Package (85194QL) provides complete measurement and extraction procedures for DC and CV model parameters. The intuitive, Windows-style user interface enables engineers to quickly produce an accurate model. The package was developed by AdMOS using features available in the IC-CAP software environment (85199A). For more information, refer to AdMOS. 

A product bundle (85194RL) that includes both the HiSIM_HV and the HiSIM2.4 Model Extraction Packages is also available.

HiSIM_HV, an industry standard HVMOS model, was developed by Hiroshima University in Japan. Earlier compact models, such as the BSIM4, were primarily developed for traditional symmetrical low voltage CMOS devices for digital applications. The HiSIM_HV model was designed for both symmetrical HVMOS and asymmetrical LDMOS devices. Laterally Diffused MOS (LDMOS) devices are used in RF power applications. The HiSIM_HV model includes other typical high voltage effects such as modeling of the drift region resistance, quasi-saturation effects and self-heating.

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