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DC–75 GHz SPDT GaAs MMIC Switch

Data Sheets

Keysight TC950

DC–75 GHz SPDT GaAs

MMIC Switch

1GG6-8054

Data Sheet

Features

  • Frequency Range:
  • DC-75 GHz
  • Insertion Loss:
  • 2.6 dB typical @ 50 GHz
  • Isolation:
  • 29 dB typical @ 50 GHz
  • Return Loss:
  • >10 dB (Both Input & Selected Output)
  • P-1dB:
  • +15 dBm
  • Harmonics:
  • <-50 dBc
  • Settling Time:
  • < ns (0.1 dB)                                  

Description

The TC950 is a GaAs monolithic microwave integrated circuit (MMIC) switch designed for low insertion loss and high isolation from DC to 75 GHz. It is intended for use as a general-purpose, single-pole, double-throw (SPDT)switch. One series and two shunt pHEMTs per throw typically provide 2.6 dB insertion loss and 29 dB isolation at 50 GHz. This IC is fabricated in MWTC’s advanced 0.12-μm gatelength GaAs pHEMT process.

Absolute Maximum Ratings

DC Specifications/Physical Properties

RF Specifications

Applications

The TC950 is a general–purpose SPDT switch IC suitable for microwave and millimeter–wave switching applications. The TC950 can be used in instrumentation, communications, radar, ECM, EW, fiber optic, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, highspeed switching, replacement of mechanical switches, and many other applications.

Operation

The RF input and output ports may be DC or AC–coupled. If DC–coupled, the voltages of the input and output ports must be within ±0.25 Volts of ground for guaranteed switch performance.

Maximum OFF–state isolation is obtained with unequal select voltages. The Short and Open states both provide some degree of isolation, but not over the entire bandwidth of the device. In addition, the Open state is not recommended because of potentially destructive overvoltage stress caused by high impedance values at the input and output ports.

Recommended Operating Conditions

Assembly Techniques

Epoxy die–attach using a conductive epoxy or solder die– attach using a fluxless gold– tin solder preform are both suitable assembly methods. The IC must be attached to an electrically conductive surface that forms DC and RF ground for the curcuit.

To maintain adequate impedance matching properties at the RF input and output ports, 500-line/inch gold wire mesh bonds (or equivalent) should be used. These bonds should be kept as short as possible to minimize parasitic inductance. DC bias may be supplied through conventional 0.7–mil gold wire bonds. In both cases, thermosonic wedge bonding is recommended. The top and bottom metallization is gold.

GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling and assembly. MMIC ESD precautions, handling considerations, and die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability.

Keysight Technologies, Inc. Application Note #54 (5991-3484EN), “GaAs MMIC ESD, Die Attach and Bonding Guidelines” provides basic information on these subjects.

S-Parameters1, RFIN to RFOUT1

(TA=25°C, VSEL1=+3V, VSEL2=-3V, Zo=50 ohms) RFOUT1: ON RFOUT2: OFF

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