Column Control DTX

Investigating Doped Material in GaN on Sapphire Substrates

Application Notes

Abstract

Gallium nitride ilms grown on sapphire substrate were investigated using Scanning Microwave Microscopy (SMM). During the growth thin, highly doped layers were included to mark the shape of the surface at regular intervals. The SMM’s capability to measure dopant densities was employed to reconstruct cross sections of these surfaces. An unintentionally doped region was found for the initial stages of the growth. The growth surface at this stage is rough with most parts of the surface tilted out of the substrate plane. This suggests a model in which inclined surfaces promote the unintentional uptake of dopant material. Later stages of the growth result in smooth surfaces without unintentional doping.

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Column Control DTX