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HMMC-5040 20–40 GHz Amplifier

Data Sheets

Description

The Keysight Technologies, Inc. HMMC-5040 is a high-gain broad-band MMIC amplifier designed for both military applications and commercial communication systems. This four stage amplifier has input and output matching circuitry for use in 50 ohm environments. It is fabricated using a PHEMT integrated circuit structure that provides exceptional broadband performance. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related performance variations and costs. This MMIC is a cost effective alternative to hybrid (discrete-FET) amplifiers that require complex tuning and assembly processes.

Applications

The HMMC-5040 broadband amplifier is designed for both military (35 GHz) applications and wireless communication systems that operate at 23, 28, and 38 GHz. It is also suitable for use as a frequency multiplier due to excellent below-band input return loss and high gain.

Biasing and Operation

The recommended DC bias condition is with all drains connected to single 4.5 volt supply and all gates connected to an adjustable negative voltage supply as shown in Figure 12. The gate voltage is adjusted for a total drain supply current of typically up to 300 mA. Figures 4, 5, 8, and 9 can be used to help estimate the minimum drain voltage and current necessary for a given RF gain and output power. The recommended DC bias condition is with all drains connected to single 4.5 volt supply and all gates connected to an adjustable negative voltage supply as shown in Figure 12. The gate voltage is adjusted for a total drain supply current of typically up to 300 mA. Figures 4, 5, 8, and 9 can be used to help estimate the minimum drain voltage and current necessary for a given RF gain and output power.

The second, third, and fourth stage DC drain bias lines are connected internally (Figure 1) and therefore require only a single bond wire. An additional bond wire is needed for the first stage DC drain bias, VD1.

Only the third and fourth stage DC gate bias lines are connected internally. A total of three DC gate bond wires are required: one for VG1, one for VG2, and one for the VG3-to-VG4 connection.

The RF input has matching circuitry that creates a 50 ohm DC and RF path to ground. A DC blocking capacitor should be used in the RF input transmission line. Any DC voltage applied to the RF input must be maintained below 1 volt. The RF output is AC-coupled.

No ground wires are needed since ground connections are made with plated through-holes to the backside of the device.

The HMMC-5040 can also be used to double, triple, or quadruple the frequency of input signals. Many bias schemes may be used to generate and amplify desired harmonics within the device. The information given here is intended to be used by the customer as a starting point for such applications. Optimum conversion efficiency is obtained with approximately 14 dBm input drive level.

As a doubler, the device can multiply an input signal in the 10 to 20 GHz frequency range up to 20 to 40 GHz with conversion gain for output frequencies exceeding 30 GHz. Similarly, 5 to 10 GHz signals can be quadrupled to 20 to 40 GHz with some conversion loss. Frequency doubling or quadrupling is accomplished by operating the first gain stage at pinch-off (VG1 = VP =~ 1.2 volts). Stages 2, 3, and 4 are biased for normal amplification. The assembly diagram shown in Figure 13 can be used.

To operate the device as a frequency tripler the drain voltage can be reduced to approximately 2.5 volts and the gate voltage can be set at about –0.4 volts or adjusted to minimize second harmonics if needed. Either of Figures 12 and 13 can be used.

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