Column Control DTX

Low and High Frequency C-V Measurement of Semiconductors

Application Notes

Keysight E4980A and 4284A Precision LCR Meters

Parameters such as the capacitance of the oxide layer (Cox) and the density of substrate impurities (Nsub) that are required in the evaluation of the manufacturing process of MOS type semiconductors can be derived by using measured C-V characteristics. To make an accurate evaluation of these processes, precise C-V measurements are required. Such measurements entail the following difficulties.

×

Please have a salesperson contact me.

*Indicates required field

Preferred method of communication? *Required Field
Preferred method of communication? Change email?
Preferred method of communication?

By clicking the button, you are providing Keysight with your personal data. See the Keysight Privacy Statement for information on how we use this data.

Thank you.

A sales representative will contact you soon.

Column Control DTX