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Keysight EEsof EDA Newsletter - Product and Application News
Keep tabs on the latest product and application news and review the archives of the Keysight EEsof EDA Newsletter.

内部通讯 2017-12-01

IMECAS uses MBP to Create a PDSOI PN Junction Model
Researchers from the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) have proposed a new simulation model for the PN junction based on SOI.

案例分析 2017-11-01

PDF PDF 391 KB
Hangzhou Dianzi University Uses IC-CAP to Extract a Novel, Small-Signal Model for Bulk FinFETs
Case study on how Hangzhou Dianzi University created a novel compact model for bulk FinFETs that accommodates self-heating behaviors.

案例分析 2017-10-10

PDF PDF 1.12 MB
Customizing Tables Just Got Easier with a New Python Module for MQA Software
Working with data tables is a basic skill every engineer learns early on in their career. When organized properly, tables can summarize a great deal of device data into a helpful information format, and that makes them extremely useful.

文章 2017-07-12

Extending the Power of IC-CAP Software with Python—PyVISA Instrument Control
Learn how to access the full capabilities of PyVISA from IC-CAP 2016 and create transforms for instrument control and data acquisition over any supported interface.

文章 2017-05-31

SRAM Cell Model Generation and Modeling Efficiency Take Center Stage in New Software Releases
Accurate and efficient modeling is critical to successful design, especially when it comes to the Static Random Access Memory (SRAM) cell, the minimum geometry devices in integrated circuit technology.

文章 2017-05-04

为何需要器件建模服务?
IC 设计以器件建模和表征为基础。

文章 2017-02-03

Transconductance Modeling for Low-Power Design
Raj Sodhi explains how to extract Gm near Vth using Keysight’s Model Builder Program (MBP) in 3 simple steps.

期刊 2017-01-18

Device Modeling 101 - What are Ft and Fmax?
Ft and Fmax are figures of merit used to benchmark the high frequency performance of RF transistors. This blog post describes the equations for these 2 parameters and how to improve the performance of RF transistors.

期刊 2016-12-18

Device Modeling 101 - How to Extract Threshold Voltage of MOSFETs
Threshold voltage (Vth) is one of the most important electrical parameters in MOSFET modeling. Learn how to extract Vth using MBP.

期刊 2016-11-17

Follow Keysight EEsof EDA on Twitter!
Twitter enables you to keep current on news and updates with Keysight EEsof through the exchange of quick, frequent answers to one simple question: What are you doing?

内部通讯 2016-07-14

Agilent embraces GaN modeling in IC-CAP upgrade
EETimes Design Article highlights new capabilities in IC-CAP 2013.01.

文章 2013-01-09

Future Device Modeling Trends
Modeling the nonlinear device (basic nonlinear component) for circuit and system simulation downstream.

文章 2012-11-28

PDF PDF 6.08 MB
Overview: Applying Nonlinear RF Device Modeling to Verify S-Parameter Linearity
This Article is intended to explain the basics of “what’s behind S-parameters” from a modeling engineer's standpoint & on how to apply Harmonic Balance simulators to check the validity of device models.

文章 2001-09-01

PDF PDF 460 KB