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How to Improve PA Performance & Reliability using Electro-Thermal Analysis Webcast

1   小時 | 網路廣播 -- 存檔 | 地點與時間

WHY THIS WEBCAST IS IMPORTANT

Thermal issues cause significant problems for today’s RF power amplifier (PA) designs implemented in GaAs, GaN, SiGe and other IC processes. Fortunately, new design tools and techniques based on electro-thermal analysis can help designers identify and correct thermal problems before it’s too late. This webcast illustrates a PA design methodology that utilizes the combination of electro-thermal simulation technology from Agilent EEsof EDA, and electro-thermal-enabled process design kits (PDKs) from WIN Semiconductor. The design methodology is used to reduce thermal impairments and improve performance of a three-stage PA for WLAN applications using WIN’s HO2U HBT Process.

WHO SHOULD ATTEND

RFIC, MMIC and RF Module designers will learn how electro-thermal analysis can optimize design performance and prevent failures due to thermal issues.

PRESENTER

Matthew Ozalas, Senior RF Module Designer, Agilent Technologies

Matthew Ozalas received his BSEE from Penn State University in 2001 and his MSEE and MBA from Arizona State University in 2010. From 2001 to 2005, he worked as part of the Advanced Wireless Department at the Mitre Corporation where he did RFIC and Power Amplifier Design for a variety of high frequency applications. From 2005-2013, he worked at Skyworks Solutions in the Santa Rosa Design Center, designing and developing high volume multiband power amplifier and front end modules for wireless handsets. He joined Agilent EEsof in 2013, where he is currently working as a Senior RF Module Designer.

地點與時間

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免費 At Your PC Enroll to view the February 6, 2014 recorded broadcast 

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