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1500A & 10kV Device Measurement Solutions for Advanced Semiconductor Power Devices.

1   Hour | Интернет-трансляция - записи | Где и когда


Learn how the new ehanced Agilent Technologies B1505A can help you characterise advanced high power semiconductor devices. 1500A and 10kV capability to allow fast accurate measurement of Gallium Nitride, (GaN) and Silicon Carbide, (SiC) devices. Additionally the new N1267A option allows the measurement and analysis of the GaN current collapse phenomea.

Who should attend:

Engineers and scientists involved in the design, development and charaterisation of advanced semiconductor devices and materials involving Silicon, Silicon carbide and Gallium Nitride. Additionally users of these advanced devices will also gain valuable information relating to the measurement of these devices.

The presenter:

Dr. Stewart Wilson holds both BSc and PhD degrees in Electronics and Electrical Engineering from the University of Glasgow, Glasgow, Scotland UK.

Dr Wilson has worked in Semiconductor and Semiconductor related activities since 1979. He has worked for Semiconductor manufacturers Motorola and National Semiconductor as well as Semiconductor equipment suppliers Eaton Corporation and Hewlett Packard/Agilent Technologies in both Europe and the United States.

Dr. Wilson is currently the European Business Manager for Agilent Technologies range Parametric Test Equipment.

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