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EDA 的创新: X 参数* 案例分析: GaN 大功率放大器(HPA)设计

网上直播 -- 已存档的 | 地点和时间

Why this Webcast is important:
This Webcast illustrates a high power (>45 dBm) amplifier design based on X-parameter measurements of a GaN transistor. A matching circuit is designed and fabricated based on the simulated contours at the source and load fundamental and harmonic frequencies utilizing the X-parameter models of the transistor (without the need for independent harmonic tuning using tuners). The resulting matching circuit cascaded with the transistor is measured and results of the final amplifier are compared against the original X-parameter model. A question and answer session is included in this informative presentation.

Who should view this Webcast:
Engineering Designers, Managers and EDA tool decision makers involved in nonlinear behavioral modeling, GaN device modeling or designing high-power amplifiers for the latest commercial wireless or Aerospace-Defense applications.

The live broadcast is at 10:00 am PACIFIC, 1:00 pm EASTERN, 6:00 pm UTC/GMT
 

* "X-parameters" is a trademark of Agilent Technologies, Inc. The X-parameter format and underlying equations are open and documented. Here is more information

地点和时间

价格 地点 更多信息
免费 At Your PC View the recording of the Jan 11, 2011 live broadcast 

显示价格为标准定价,如有变更,恕不另行通知。

培训及活动材料

Webcast Slides: X-Parameter Case Study: GaN High Power Amplifier (HPA) Design 
This Webcast illustrates a high power (>45 dBm) amplifier design based on X-parameter measurements of a GaN transistor.

研讨会演示 2011-01-11

PDF PDF 1.72 MB