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Foundry Partners - Global Communication Semiconductors, LLC.

Global Communication Semiconductors, Inc.

Foundry Partner GCS - Wing Yau

GCS Provides PDKs for Keysight ADS  — Wing Yau, Senior Vice President, Global Communication Semiconductors (GCS) responsible for Foundry Services and Applications Engineering, describes what GCS provides for mutual customers of Keysight EEsof EDA and GCS.

Global Communication Semiconductors, founded in 1997, as a California Corporation, Global Communication Semiconductors, LLC ("GCS") is an ISO-certified premier pure-play compound (III-V) semiconductor (GaAs, InP and GaN ) wafer foundry service provider that manufactures technology leading, high performance, high quality, semiconductor devices. Portfolio offerings include Radio Frequency Integrated Circuits (RFIC) and millimeter wave integrated circuits for the wireless markets, power devices for power electronics, and Photodetectors and Lasers for optical communications markets.

Full front-to-back ADS PDK support matrix:

GCS Process Design Kits
Process Name Process Description ADS Front/Back PDK Momentum Substrate MMIC Toolbar DRC LVS - Device Recognition LVS - Physical Nets ETH
P1 InGap HBT – P1 2009 F/B Y Y Y N N N
P2  InGap HBT – P2  2012+  F/B  Y Y Y Y Y Y
P3  InGap HBT – P3  2012+  F/B  Y Y Y N N N
P5  InGap HBT – P5  2012+  F/B  Y Y Y N N N
P6 InGap HBT – P6  2012+  F/B  Y Y Y N N N
P7 InGap HBT – P7  2012+  F/B  Y Y Y N N N
D1 InGap HBT – D1  2012+  F/B  Y Y Y N N N
D5  InGap HBT – D5  2012+  F/B  Y Y Y N N N
SHBT1  InP SHBT1 (180GHz Ft)  2012+  F/B  N Y N N N N
DHBT1 InP DHBT1 (150GHz Ft)  2012+  F/B  Y Y N N N N
DHBT2 InP DHBT2 (250GHz Ft)  2012+  F/B  Y Y N N N N
DHBT3  InP DHBT3 (300GHz Ft)  2012+  F/B  N Y N N N N
HP GaAs 0.5µm HFET  2012+  F/B  Y Y Y N N N
HQ GaAs 0.25µm HFET 2012+ F/B Y Y Y N N N
FP GaAs pHEMT – 0.5µm (D-mode power) 2012+  F/B  Y Y Y N N N
FS GaAs pHEMT - 0.5µm switch  2012+  F/B  Y Y N N N N
FQ GaAs pHEMT - 0.25µm (D-mode power)  2012+  F/B  Y Y Y N N N
FQ_LN GaAs pHEMT - 0.25µm (D-mode low noise) 2012+ F/B Y Y Y N N N
FQ_EN GaAs pHEMT - 0.25µm (E-mode low noise) 2012+ F/B Y Y Y N N N
FQ_ED GaAs pHEMT - 0.25µm (E/D-mode power) 2012+ F/B Y Y Y N N N
GP  GaN HEMT - 0.5µm 2012+  F/B  Y Y Y N N N
GQ  GaN HEMT - 0.25µm 2012+  F/B  Y Y Y N N N
DM THz Schottky diode - Non-AirBridge 2012+ F/B Y Y N N N N
DF THz Schottky diode - AirBridge  2012+  F/B  Y Y N N N N
VC RFPIN diode 2012+ F/B Y N Y N N N
PM Integrated Passive Device A - Non-AirBridge 2012+ F/B Y N Y N N N
PF Integrated Passive Device B - AirBridge 2012+ F/B Y N Y N N N

The PDKs are distributed by GCS and are available for immediate use with the Keysight ADS software.

Press Releases

For more information on GCS, refer to Global Communication Semiconductors, LLC. 

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