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Corner and Target Modeling Extraction Packages

Corner Modeling Extraction Package

The IC-CAP Corner Modeling Extraction Package enables modeling engineers to generate corner model libraries of CMOS semiconductor processes from process control measurements (PCM) statistics and silicon-based extracted models from measurements. Unlike extracted models from measured data which describe the behavior of a specific set of devices, corner models describe the model behavior when statistical process variation occurs. Corner models for N and P CMOS devices are combined to create a simulator library file which can be used to simulate worst case circuit conditions.

Key Features of the Corner Modeling Extraction Package

  • Efficient and accurate extraction of statistical corner models for CMOS devices
  • Simple Corner project setup and customized via excel spreadsheet; typical CMOS targets are pre-defined (e.g. Idmax, Idoff, Vth, etc.) , but users can add/customize additional targets
  • Easy import of libraries extracted from silicon based measured data, such as output libraries from traditional CMOS extractions (e.g. BSIM4, PSP or HiSIM Extraction Packages)
  • Dedicated display window which includes graphics of targets and parameter tuning capabilities
  • Automatic creation of final simulator corner libraries (including N and P type corner devices)
  • Powerful simulator suite runs automated simulations for all supported simulators and identify warnings/errors
  • Automated HTML report generation
  • Simulation support for Keysight Advanced Design System (ADS), Synopsys’ HSPICE, Cadence Spectre and Mentor Graphics ELDO

Overview

The Corner Modeling Package has dedicated user interface (UI) and tools that assist the engineer proceeding through the following extraction and verification steps:

  1. Create a new project by defining available PCM targets and their statistics (mean, min and max values) for each corner device.
  2. Select the simulator, library settings and parameters used for corner modeling tuning. The tool automatically creates a raw library which will be used during the tuning process.
  3. Perform corner modeling by first centering the typical model parameters to match typical device behavior. Then tune parameters to match the corner behavior (see dedicated UI Window for tuning in the figure below).
  4. Automatically generate final corner models libraries for one or more simulators and use the Simulator Suite to run verification test. The Suite will run user customizable simulations using the extracted corner library and warn if errors or warnings occur during simulation.
  5. Finally, create HTML report for documentation purposes.

Corner Modeling Extraction Package

Target Modeling Extraction Package

The IC-CAP Target Modeling Extraction Package enables engineers to efficiently extract or re-center CMOS models based on process control monitor (PCM) target data. Traditional CMOS modeling uses extensive I-V and C-V data for various device geometries. These are typically obtained from time consuming measurements when the process is stable and mature. To extract accurate CMOS models much earlier in the design cycle, Target Modeling uses process control monitor (PCM) data, typically fast single bias point measurements, which are commonly available in the early stages of process development.

Key Features of the Target Modeling Package

  • A dedicated user interface specifically designed for this application
  • Import of PCM data and related bias information form Excel spreadsheets
  • Import and display statistical information of PCM data (mean and spread values)
  • Direct support of BSIM3, BSIM4, PSP, HiSIM2 and BSIMSOI4 models
  • Direct links to simulators including ADS, Spectre and HSPICE.
  • Display, tune and optimize user defined scaling and I-V diagrams
  • Customizable automatic generation of HTML reports
  • Open architecture enables import and use of traditional I-V traces in conjunction with PCM data plots

Overview

The Extraction Package includes a dedicated UI main window that manages the PCM data import and the creation of scaling and I-V diagrams. Device information and PCM data are imported directly from excel spreadsheet. Convenient wizards enable you to define subsets of devices and derive PCM data scaling diagrams (e.g. Ion vs. L, Ioff vs. W, etc.).

Target Modeling with IC-CAP

A dedicated user interface enables you to combine diagrams into multiple plots. The powerful IC-CAP Plot Optimizer tool enables you to conveniently select model parameters and tune and optimize scaling and I-V plots.

Target Modeling with IC-CAP

Powerful simulator links to Advanced Design System (ADS) and enables real time tuning performance when simulating multiple devices.

Learn more about IC-CAP Device Modeling Software.