NX5730A High Throughput 1 ns Pulsed IV Memory Test Solution
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Key Features and Functions
- Precise and fast characterization of new memory, such as spin transfer torque magnetoresistive random access memory (STT-MRAM) from DC to high-speed pulsed IV measurement on silicon wafers
- Apply accurate and high-speed pulsed voltages (down to 1 ns pulse) to magnetic tunnel junction (MTJ) for STT-MRAM and precisely measure the resistance of MTJ
- Perform all typical MTJ characterization tests in one solution
- 10 to 100 times faster cycle test, such as a bit error rate test (BERT)
- Capture and visualize MTJ switching waveforms clearly during the writing pulse
- Dedicated solution with Keysight Technologies’ technical expertise
Data Sheet and Key Documents
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Software for this Product
Frequently Bought Together
Precision Current-Voltage Analyzers
- Integrated SMUs and characterization software makes IV characterization much quicker and simpler
- EasyEXPERT group+ software supports all the characterization tasks
- A wide selection of analyzers suitable to your specific measurement needs
* Prices for: Turkmenistan. Prices are subject to change without notice. Prices shown are Manufacturer's Suggested Retail Prices (MSRP).
