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Prices for: United States

* Prices are subject to change without notice. Prices shown are Manufacturer's Suggested Retail Prices (MSRP). Prices shown are exclusive of taxes.

Key Features & Specifications

  • Parameter extraction for ASM HEMT model , adopted as an industry-standard by the CMC in 2018
  • Automatic import of measured data (DC, CV and S-parameters when available)
  • New UI and automated extraction
  • Temperature dependent modeling
  • Model verification and quality check
  • Report generation
  • Fully integrated into the PD1000A Power Device Measurement System for Advanced Modeling solution


The W8538EP IC-CAP GaN Power Electronics Modeling Add-on software package enables the extraction of parameters of circuit compact models for gallium nitride high electron mobility transistors (GaN HEMT) devices. It imports simple and advanced measurement data and automatically extracts a model that can be used in Keysight’s Advanced Design System (ADS). This tool may be used as a part of the larger PD1000A Power Device Measurement System for Advanced Modeling, which covers power device measurements, modeling and circuit simulation. For modeling engineers who plan to innovate their own extraction flows, this tool allows the maximum flexibility to customize their extraction sequences.


Figure 1. On the Extract tab, you can extract model parameters using a provided flow or some variation thereof.