Here’s the page we think you wanted. See search results instead:


Discutez avec un expert


Prices for: France

* Les prix sont susceptibles de fluctuer sans préavis. Pour obtenir un prix ou un devis, veuillez cliquer sur « Request Price » ou appeler le 0805 980333.

Key Features & Specifications

  • Parameter extraction for Keysight’s latest state-of-the-art insulated gate bipolar transistor (IGBT) model
  • Keysight IGBT model does not require process parameter information
  • Automatic import of measured data (DC, CV and S-parameters when available)
  • New UI and automated extraction
  • Temperature dependent modeling
  • Model verification and quality check
  • Report generation
  • Fully integrated into the PD1000A Power Device Measurement System for Advanced Modeling solution


The W8537EP IC-CAP IGBT Power Electronics Modeling Add-on package enables the extraction of parameters of circuit compact models for Insulated Gate Bipolar Transistor (IGBT) devices. It imports simple and advanced measurement data and automatically extracts a model that can be used in Keysight’s Advanced Design System (ADS). This tool may be used as a part of the larger PD1000A Power Device Measurement System for Advanced Modeling, which covers power device measurements, modeling and circuit simulation. For modeling engineers who plan to innovate their own extraction flows, this tool allows the maximum flexibility to customize their extraction sequences.

IC-CAp IGBT Extraction Tab

Figure 1. On the Extract tab, you can extract model parameters using a provided flow or some variation thereof.