Here’s the page we think you wanted. See search results instead:

 

Contact an Expert

FET Modeling

The following Field-Effect Transistor (FET) models are supported in IC-CAP.

Product Number Model Product Description
W8530EP Keysight EEFET3, Keysight EEHEMT1, Curtice cubic and quadratic, Raytheon’s Statz Complete measurement and extraction procedure for the supported models.
W8532EP Keysight Root FET, MOS and Diode Automated modeling procedure for DC and RF 3-terminal applications using interpolative spline fitting of S-parameters and DC data arrays over the device's operating range. This license also includes extraction for Keysight Root Diode and MOS models.
W8533EP Angelov-GaN Accurate turn-key measurement and extraction solution for the Angelov-GaN model
  • W8530EP IC-CAP High Frequency FET Models W8530EP IC-CAP High Frequency FET Models 

    W8530EP IC-CAP High Frequency FET Models

    Includes extractions for several industry standard High Frequency FET compact models: EEFET3, EEHEMT1, Curtice and Statz.

  • W8532EP IC-CAP Root Models Generator W8532EP IC-CAP Root Models Generator 

    W8532EP IC-CAP Root Models Generator

    Automated modeling procedure for DC and RF 3-terminal applications using interpolative spline fitting of S-parameters and DC data arrays over the device's operating range. Also includes extraction for Root Diode and MOS models.

  • W8533EP IC-CAP Angelov-GaN Extraction Package W8533EP IC-CAP Angelov-GaN Extraction Package 

    W8533EP IC-CAP Angelov-GaN Extraction Package

    Accurate turn-key measurement and extraction solution for the Angelov-GaN model