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Highlights

  • Precise and fast characterization of new memory, such as spin transfer torque magnetoresistive random access memory (STT-MRAM) from DC to high-speed pulsed IV test on silicon wafers
  • Apply accurate and high-speed pulsed voltages (down to 1 ns pulse) to magnetic tunnel junction (MTJ) for STT-MRAM and precisely measure the resistance of MTJ
  • Perform all typical MTJ characterization tests in one memory test solution
  • 10 to 100 times faster cycle test, such as a bit error rate test (BERT)
  • Capture and visualize MTJ switching waveforms clearly during the writing pulse
  • Dedicated 1 ns IV memory test solution with Keysight technical expertise
What's Included:
  • System cabinet
  • PIV driver unit
  • PIV receiver unit

Key Specifications

Technische Spezifikation herunterladen
Maximum Number of SPGU output channels
n/a
Maximum Number of Measurement Pins
2
Minimum Current Measurement Resolution
1 pA
Minimum Voltage Measurement Resolution
n/a
Parallel Parametric Test Capability
Nein
Maximum Number of SPGU output channels
Maximum Number of Measurement Pins
Minimum Current Measurement Resolution
Minimum Voltage Measurement Resolution
Parallel Parametric Test Capability
n/a
2
1 pA
n/a
Nein
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Additional Features:
n/a
Form Factor:
n/a
Maximum Number of Measurement Pins:
2
Maximum Number of SPGU output channels:
n/a
Minimum Current Measurement Resolution:
1 pA
Minimum Voltage Measurement Resolution:
n/a
Parallel Parametric Test Capability:
Nein
Pulse Voltage Range:
-2 V to +2 V
Pulse Width Range:
1 ns to 2 s
Type:
Memory Test Solution
High throughput 1 ns pulsed IV memory test solution

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