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Creating a PN Junction Model with MBP Device Modeling Software

Case Studies

 Silicon-on-insulator (SOI) technology is rapidly becoming mainstream due to its lower power, higher speed and higher packing density. The shallow PN junction is used in partially-depleted silicon-on-insulator (PDSOI) technology to resolve the response problem that occurs during total-dose radiation.

Researchers from the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) have proposed a new simulation model for the PN junction based on SOI. Keysight Technologies’ Model Builder Program (MBP) software was used to extract the model parameters. The capacitance-voltage (CV) fitting results of the N+P junction are shown in Figure 1.

 Silicon-on-insulator (SOI) technology is rapidly becoming mainstream due to its lower power, higher speed and higher packing density. The shallow PN junction is used in partially-depleted silicon-on-insulator (PDSOI) technology to resolve the response problem that occurs during total-dose radiation.

Researchers from the Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) have proposed a new simulation model for the PN junction based on SOI. Keysight Technologies’ Model Builder Program (MBP) software was used to extract the model parameters. The capacitance-voltage (CV) fitting results of the N+P junction are shown in Figure 1.

Challenge

Utilization of the special PN junction in a device fabricated in SOI technology requires proper modeling. However, the standard diode model is simply not suitable for this task. This model is very different from the PN junction in bulk silicon.

Solution

To eliminate this obstacle, IMECAS researchers proposed a simulation model based on the PDSOI process. Figure 2 shows the measured CV characteristics of the PN junction. Unlike a normal diode, the curve is not smooth. It can be divided into three parts according the value of Vpn (i.e. the X-axis of Figure 2).

The PN junction model was implemented in Verilog-A using the standard diode model. The code was divided into three parts in keeping with the bias of the PN junction. The model is based on the physical mechanism. The parameters are easily extracted using Keysight’s MBP software.

Results

The model proposed by IMECAS researchers fits the measured data well, especially in the transition region. This junction model can also be embedded into the MOSFET model.

To verify the model, researchers used a 101-stage ring-oscillator. The measured and simulated periods of the ring-oscillator are shown in the Table.

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