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The statistical approach has become popular to design systems where the accurate prediction of random jitter is required at ultra-low BER, and DDR4 is one of the examples. The limitation of this approach is not being able to model the voltage noise due to SSO/SSN, since the statistical approach assumes the system to be time-invariant. This paper proposes a solution that extracts the jitter model from the voltage noise calculated from a transient simulation, then use it for accurate prediction of timing and voltage margin calculation in the statistical analysis. Measurements data is provided to validate the approach.
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