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Application Notes
Introduction
This application note describes a workspace 1 that features several load pull and DC I-V simulations of a Cree Field-Effect Transistor (FET). The workspace may be used to see what performance (e.g., output power, gain and power-added efficiency (PAE)) could be obtained, and what source and load impedances should be used to attain a desired level of performance (or make trade-offs). Using the schematics and data displays, you will be able to determine things like:
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