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Thickness-Dependent Electrical Properties of Graphene

Application Notes

Graphene and its derivatives have emerged as a promising family of materials for nanoelectronics in a postsilicon era.1 From an assembly point of view, these atomically thin carbon sheets of either single-layer graphene (SLG) or few-layer graphene (FLG) are well compatible with existing planar device architectures. On the other hand, one signiicant advantage of graphene-related nanomaterials is their highly tunable electrical properties such as carrier type or density, and rich electronic band structures. For instance, while single-layer graphene has a zero band gap, few-layer graphene differ from the intrinsic SLG in that they have various band gaps as a function of their number of layers. Consequently, a delicate control of graphene ilms with well-deined band gaps and thus to regulate their electronic properties is achievable.

Potential applications of graphene sheets as ultrathin transistors, sensors and other nanoelectronic devices require them supported on an insulating substrate. Therefore, a quantitative understanding of charge exchange at the interface and spatial distribution of the charge carriers is critical for the device design. While the impact of the substrate and interlayer interactions on the electronic structures of FLG is discussed extensively in prior theoretical simulation,2–7 experimental data of directly measuring the graphene-substrate interactions are lacking. In this note, we report that atomic force microscopy (AFM)-based technique Kelvin force microscopy (KFM) as an experimental means to investigate the local electrical properties of both single-layer and few-layer graphene ilms on silicon dioxide. The effect of the ilm thickness on the surface potential is detected and quantitative measurements are obtained.

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