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Application Notes
The production testing needs of modern high-density NAND flash memory processes and novel flash memory technologies such as multi-level cell (MLC) and charge-trapped flash memory present many new measurement challenges. The Keysight 4082F Flash Memory Cell Test System, which utilizes a new high-voltage semiconductor pulse generator unit (HV-SPGU), meets the production parametric testing needs of these advanced non-volatile memory technologies. The Keysight 4082F provides high throughput, high resolution, and high repeatability for the write/ erase endurance testing of a wide variety of state-of-the-art flash memory cells.
Driven by strong growth in MP3 music players and the digital camera markets, the demand for NAND flash memory as a mass storage medium continues to grow at a rapid pace. The expected replacement of smaller hard disk drives with flash memory will only continue to accelerate this trend, as will the increased use of integrated flash memory in microcontrollers to store program code. These market forces have also accelerated the need to decrease costs and increase densities by reducing the memory cell area through such means as multi-bit cells and charge trap flash memory. For this reason, the ability to create precise voltage pulses to evaluate the write/erase characteristics of these advanced flash technologies has become very important in both process development and production. The Keysight 4082F and HV-SPGU form a complete solution to evaluate the write/erase characteristics of these types of advanced flash memory.
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