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HMMC-5025 2-50 GHz Distributed Amplifier 1GG6-8000

Data Sheets

Description

The HMMC-5025 was designed as a generic wide band distributed amplifier, covering the frequency span 2-50 GHz. It consists of seven stages. Each stage is made up of two cascaded FETs with gate peripheries of 48 μm per FET. Both input and output ports were designed to provide 50 Ohm terminations. Bonding pads are provided in the layout to allow amplifier operation at frequencies lower than 2 GHz by means of external circuit components.

The amplifier is biased with a single positive drain supply (VDD) and a single negative gate supply (VG1). A second gate connection is provided for external gain control applications.

Applications

The HMMC-5025 traveling wave amplifier is designed for use as a general purpose wideband power stage in communication systems, and microwave instrumentation, and optical systems. It is ideally suited for broadband applications requiring a flat gain response and excellent port matches over a 2 to 50 GHz frequency range. Dynamic gain control and low frequency extension capabilities are designed into these devices.

It is characteristic of traveling wave amplifiers that S22 tends to 0 dB and greater out of band. This is the design trade-off for the broadband performance of TWAs. As a consequence, TWAs are not necessarily unconditionally stable out of band. This means that if a TWA is followed by a reflective low-pass filter, oscillations can occur. This phenomenon is exacerbated by low temperature where the gain is higher. More data will follow on individual devices.

Biasing and Operation

The recommended bias conditions for best performance for the HMMC- 5025 are VDD = 5.0 V, IDD = 75 mA. To achieve these drain current levels, VG1 is typically biased between –0.2 V and –0.6 V. No other bias supplies or connections to the device are required for 2 to 50 GHz operation. The gate voltage (VG1) should be applied prior to the drain voltage (VDD) during power up and removed after the drain voltage during power down.

The HMMC-5025 is a DC coupled amplifier. External coupling capacitors are needed on RFIN and RFOUT ports. The drain bias pad is connected to RF and must be decoupled to the lowest operating frequency.

The auxiliary gate and drain contacts are provided when performance below 1 GHz is required. Connect external capacitors to ground to maintain input and output VSWR at low frequencies (see Additional References). Do not apply bias to these pads.

The second gate (VG2) can be used to obtain 30 dB (typical) dynamic gain control. For normal operation, no external bias is required on this contact.

Assembly Techniques

GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly.

MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. 

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