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Data Sheets
Output –15 dB
Description
The Keysight Technologies, Inc. HMMC-5620 is a wideband GaAs MMIC amplifier designed for medium output power and high gain over the 6 to 20 GHz frequency range. Four MESFET cascade stages provide high gain, while the single bias supply offers
ease of use. E-Beam lithography is used to produce gate lengths of ~0.3 μm. The HMMC-5620 incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection.
Applications
The HMMC-5620 amplifier is designed for use as a general purpose wideband, high gain stage in communication systems and microwave instrumentation. It is ideally suited for broadband applications requiring high gain and excellent port matches over a 6 to 20 GHz frequency range. Both RF input and output ports are AC–coupled on chip.
Biasing and Operation
This amplifier is biased with a single positive drain supply (VDD). The recommended bias for the HMMC-5620 is VDD = 5.0 V, which results in IDD = 100 mA (typ.). No other bias supplies or connections to the device are required for 6 to 20 GHz operation. See Figure 3 for assembly information.
Assembly Techniques
For RF bonds, MWTC recommends low inductance mesh interconnections for best return loss performance. GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly.
MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability.
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