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RF & Microwave Circuit Design and Simulation Seminar 2017

Keysight Technologies will be presenting at this one day event at Cardiff University on Wednesday 13th September. Hear the experiences of industry experts engaged in the key stages of RF, microwave and millimetre wave design flow; from high level system analysis through to circuit design and packaging considerations.


Who should attend:

Engineers, Researchers, Consultants and Managers engaged in the field of high frequency circuit design or system design. Whether you're a seasoned professional or new to the field, there’s something for you.

Full day agenda:

Time Agenda
09:30 - 09:45 Welcome & Introduction
09:45 - 10:45 Paul Tasker – Cardiff University - Waveform Engineering and Behavioural Modelling
10:45 - 11:00 Coffee Break
11:00 - 12:00 Eric Leclerc – UMS - Latest improvements in modeling for GaN and GaAs foundry processes with the support of ADS capabilities
12:00 - 13:00 Lunch
13:00 - 14:00 David Collins – Plextek RFI - 3.5GHz GaN PA Design for 5G Applications using Keysight ADS
14:00 - 15:00 Dave Morris – Keysight - Electromagnetic Simulation in a streamlined RF/Microwave Circuit Design Flow
15:00 - 15:15 Coffee Break
15:15 - 16:15 Chris Clifton – Sony – 5G Millimetre Wave Implementation Aspects
16:15 - 16:30 Closing & Prize Draw

Papers and Abstracts

Eric Leclerc, UMS:

“Latest improvements in modeling for GaN and GaAs foundry processes with the support of ADS capabilities”

GaN devices modelling being a key point for successful design, UMS philosophy is to develop in-house set of equations to describe as accurately as possible the behaviour of GaN or GaAs devices. For the GH25 process (0.25µm GaNHemt), the Dr. C.Chang’s set of equations are taking into account many effects of GaN pHemt . Of course the non-linear behaviours of Gm and Gate charges are taken into account but also such frequency dispersive effects and self-heating in a self-consistent approach validated by physical measurements on devices.
In addition to NL models, our ADS PDKs include also additional features such as DRC capability and 3D view generation for Momentum simulations. Some critical modelling aspects will be described.
New themes under development for PDK improvement will be also reviewed: maximum ratings verification and compatibility with ADS thermal tool.

David Morris, Keysight Technologies:

“Electromagnetic Simulation in a streamlined RF/Microwave Circuit Design Flow”

Electromagnetic Simulation is widely recognised as an indispensable tool for most high frequency circuit designers. Transferring design and simulation data between design tools can be time consuming and error prone. This presentation will focus on the benefits of a fully integrated high frequency circuit / electromagnetic design flow and demonstrate some of the recent enhancements which extend the design and analysis capabilities beyond those possible with separate ‘point tools’.

Chris Clifton, Sony:

“5G Millimeter Wave Implementation Aspects”
The disruptive opportunities of 5G technology will firstly be highlighted followed by a discussion on the challenges associated with mmWave communications and how these can be mitigated by approaches such as beamsteering. Then various front-end architectures will be highlighted together with the potential implications to the required specifications of front-end components such as filters. Finally, we will make a general overview of various approaches and technologies for mmWave module integration and compare their relative merits.

Paul Tasker, Cardiff University:

“Waveform Engineering and Behavioural Modelling”

In the design of high efficiency microwave power amplifiers, it is a well-established fact that fundamental theoretical understanding is best undertaken by considering the time varying voltage and current waveforms present at the input and output terminals of a transistor. However, microwave characterisation undertaken to support power amplifier design, for example load-pull measurements are typically performed in the frequency domain, hence design and optimisation has had to follow an alternative strategy. 
Microwave measurement systems can now be configured to capture current and voltage time varying waveforms. This has led to a revival of power amplifier design strategies based on waveforms, so called “waveform engineering”. This, in turn, has triggered new theoretical insight, the concept of “continuous modes”, and advances in the approaches of utilising measurement data during non-linear CAD design; “behaviour models”. All these aspects will be reviewed in this presentation.

David Collins, Plextek RFI:

“3.5GHz GaN PA Design for 5G Applications using Keysight ADS”

This presentation will describe the design of a two stage 50W PA for the 3.4-3.8 GHz 5G band, which is considered the primary band for the introduction of 5G services in Europe. The design uses commercially available discrete GaN transistors from Qorvo, the QPD1010 and QPD1015, and was optimized for high efficiency. Details of the design process will be described, including the use of non-linear device models, the circuit schematic, PCB layout, EM simulation and optimisation. The advantages of using GaN devices to realise this type of high output power, high efficiency and compact PA will be discussed together with practical implementation issues.

Where & When

Date(s) Location For more information
2017-09-13 Cardiff University Register here