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MMIC (Monolithic Microwave Integrated Circuit) Millimeter-Wave & Microwave Devices

Keysight offers a series of millimeter-wave and microwave MMICs that provide superior performance over a wide bandwidth from DC to 50 GHz, including both analog and digital applications. The below listed HMMC and HSCH products are available through a selection of worldwide distribution partners. The 1Gxx line of products are also available through distribution partners to a select set of customers. Certain restrictions apply.

For commercial or technical questions related to the millimeter-wave and microwave devices, direct your questions to Keysight at mmic_helpline@keysight.com

Coming soon! Keysight IC’s will have X-Parameter models available. With X-Parameters, a mathematical superset of S-parameters, Keysight ICs can be modeled in both large-signal and small-signal conditions. For more information on X-Parameters, visit here.

For more information on Keysight IC X-Parameter models contact mmic_helpline@keysight.com

Check this site in the future for additional information.

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HMMC–2027 DC–26.5 GHz SPDT GaAs MMIC Switch 1GG7-8005 - Data Sheet
The HMMC-2027 is used in communications, radar, and other systems requiring SPDT switching. It is used for pulse modulation, port isolation, transfer switching, high-speed switching, and replacement of mechanical switches.

Data Sheet 2013-11-26

PDF PDF 396 KB
HMMC-2007 DC–8 GHz Terminated SPDT Switch 1GG7-8004 - Data Sheet
The HMMC-2007 can be used in communications, radar, ECM, EW, and many other systems requiring SPDT switching. It can be used for pulse modulation, port isolation, transfer switching, high-speed switching, and replacement of mechanical switches.

Data Sheet 2013-11-14

PDF PDF 833 KB
TC950 DC–75 GHz SPDT GaAs MMIC Switch 1GG6-8054 - Data Sheet
The TC950 is a GaAs monolithic microwave integrated circuit (MMIC) switch designed for low insertion loss and high isolation from DC to 75 GHz. It is intended for use as a general-purpose, single-pole, double-throw (SPDT) switch. One series and two shunt pHEMTs per throw typically provide 2.6 dB insertion loss and 29 dB isolation at 50 GHz. This IC is fabricated in MWTC’s advanced 0.12-μm gatelength GaAs pHEMT process.

Data Sheet 2009-01-01

PDF PDF 1.56 MB